摘要 |
PROBLEM TO BE SOLVED: To obtain an organocopper compound for metal organic chemical vapor deposition, which is readily vaporizable, stably supplied as a raw material in film forming, with which a film-forming speed is improved, a metal organic chemical vapor deposition apparatus is hardly corroded, treatment of exhaust gas in a MOCVD process is not complicated and adhesivity to a substrate film is excellent. SOLUTION: The organometallic compound for metal organic chemical vapor deposition is represented by general formula (1) or formula (2) (R<SB>1</SB>is a methyl group and R<SB>2</SB>is an isobutyl group, R<SB>1</SB>is a methyl group and R<SB>2</SB>is an isopropyl group or R<SB>1</SB>is an isobutyl group and R<SB>2</SB>is a t-butyl group). COPYRIGHT: (C)2003,JPO
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