发明名称 ORGANOCOPPER COMPOUND FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND COPPER THIN FILM PREPARED BY USING THE SAME
摘要 PROBLEM TO BE SOLVED: To obtain an organocopper compound for metal organic chemical vapor deposition, which is readily vaporizable, stably supplied as a raw material in film forming, with which a film-forming speed is improved, a metal organic chemical vapor deposition apparatus is hardly corroded, treatment of exhaust gas in a MOCVD process is not complicated and adhesivity to a substrate film is excellent. SOLUTION: The organometallic compound for metal organic chemical vapor deposition is represented by general formula (1) or formula (2) (R<SB>1</SB>is a methyl group and R<SB>2</SB>is an isobutyl group, R<SB>1</SB>is a methyl group and R<SB>2</SB>is an isopropyl group or R<SB>1</SB>is an isobutyl group and R<SB>2</SB>is a t-butyl group). COPYRIGHT: (C)2003,JPO
申请公布号 JP2003252823(A) 申请公布日期 2003.09.10
申请号 JP20020053412 申请日期 2002.02.28
申请人 MITSUBISHI MATERIALS CORP 发明人 SAI ATSUSHI;OGI KATSUMI
分类号 C07C49/92;C07F1/08;C23C16/18;H01L21/28;H01L21/285;(IPC1-7):C07C49/92 主分类号 C07C49/92
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