发明名称 |
CONTROL METHOD FOR NONVOLATILE STORAGE DEVICE, AND MEMORY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To accelerate the speed of access to the area of high access frequency with limited RAM capacity in a control method for a nonvolatile storage device in which a logical address and a physical address are made corresponding by an address translation table. SOLUTION: A nonvolatile storage device 1 is divided into a plurality of areas, the address translation table is generated on a RAM 2 for the unit of an area and with respect to at least one area of high access frequency, the address translation table is placed on the RAM 2 all the time but with respect to at least another area, the address translation table is created on the RAM 2 on the basis of an access history. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003256269(A) |
申请公布日期 |
2003.09.10 |
申请号 |
JP20020050961 |
申请日期 |
2002.02.27 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
SHIYOURAIDEN JUICHI;KUNIMUNE DAISUKE |
分类号 |
G06F12/14;G06F12/00;G06F12/02;G06F21/24;(IPC1-7):G06F12/02 |
主分类号 |
G06F12/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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