| 发明名称 |
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
An electronic device with improved variable resistance characteristics and a method for fabricating the same are provided. In an embodiment of the disclosed technology, a method for forming an electronic device with a semiconductor memory includes forming a crystalized doped layer over a substrate; forming a barrier layer over the doped layer; forming a metal layer over the barrier layer; and reacting the barrier layer with a portion of the metal layer. The electronic device and the method of fabricating the same according to embodiments of the disclosed technology may have improved variable resistance characteristics. |
| 申请公布号 |
US2016181522(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201514792466 |
申请日期 |
2015.07.06 |
| 申请人 |
SK hynix Inc. |
发明人 |
Kim Sook-Joo;Oh Jae-Geun;Lee Hyung-Suk |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming an electronic device with a semiconductor memory, comprising:
forming a crystalized doped layer over a substrate; forming a barrier layer over the crystalized doped layer; forming a metal layer over the barrier layer; and reacting the barrier layer with a portion of the metal layer. |
| 地址 |
Icheon-Si KR |
