发明名称 |
RGBZ PIXEL UNIT CELL WITH FIRST AND SECOND Z TRANSFER GATES |
摘要 |
An image sensor is described having a pixel array. The pixel array has a unit cell that includes visible light photodiodes and an infra-red photodiode. The visible light photodiodes and the infra-red photodiode are coupled to a particular column of the pixel array. The unit cell has a first capacitor coupled to the visible light photodiodes to store charge from each of the visible-light photodiodes. The unit cell has a readout circuit to provide the first capacitor's voltage on the particular column. The unit cell has a second capacitor that is coupled to the infra-red photodiode through a first transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure. The first capacitor is coupled to the infra-red photodiode through a second transfer gate transistor to receive charge from the infra-red photodiode during the time-of-flight exposure. |
申请公布号 |
US2016181298(A1) |
申请公布日期 |
2016.06.23 |
申请号 |
US201414579965 |
申请日期 |
2014.12.22 |
申请人 |
Google Inc. |
发明人 |
Wan Chung Chun;Fowler Boyd |
分类号 |
H01L27/146;H04N5/3745;H04N5/33 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus, comprising:
an image sensor comprising a pixel array having a unit cell that includes visible light photodiodes and an infra-red photodiode, the visible light photodiodes and the infra-red photodiode coupled to a particular column of the pixel array, the unit cell having a first capacitor coupled to the visible light photodiodes to store charge from each of the visible-light photodiodes, the unit cell having a readout circuit to provide the first capacitor's voltage on the particular column, the unit cell having a second capacitor that is coupled to the infra-red photodiode through a first transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure, the first capacitor being coupled to the infra-red photodiode through a second transfer gate transistor to receive charge from the infra-red photodiode during the time-of-flight exposure. |
地址 |
Mountain View CA US |