METHOD FOR MAKING AN INTEGRATED CIRCUIT IN THREE DIMENSIONS

摘要

Method of making an integrated circuit, comprising at least the following steps:;a) form a first semiconducting or conducting element, covered with a first insulating layer on which there is a second semiconducting or conducting element, covered with a second insulating layer;;b) form an opening passing through at least the second insulating layer, exposing a portion of the second element and opening up at least partly on the second element or adjacent to the second element;;c) form a spacer located at the second element and comprising at least one dielectric material located at least between the second element and the opening;;d) prolong the opening through the first insulating layer as far as the first element; and;e) fill the opening with at least one conducting material, so as to form a contact.;FIG 1G.

主权项

1. A method of making an integrated circuit, comprising at least the following steps:
a) form a first semiconducting or conducting element, covered with a first insulating layer on which a second semiconducting or conducting element is arranged, covered with a second insulating layer; b) form an opening passing through at least the second insulating layer, exposing a portion of the second element and opening up at least partly on the second element or adjacent to the second element; c) form a spacer located at the second element and comprising at least one dielectric material located at least between the second element and the opening; d) prolong the opening through the first insulating layer as far as the first element; e) fill the opening with at least one conducting material, so as to form a contact; and in which step c) to form the spacer comprises at least the following steps:
isotropic etching of a part of the second element including at least said portion of the second element, so as to form a cavity located between the first and second insulating layers;deposit at least one dielectric material at least on the walls of the opening and in the cavity; andeliminate the dielectric material except in the cavity.