| 发明名称 |
Focused Radiation Beam Induced Thin Film Deposition |
| 摘要 |
A method of depositing a material on a surface is disclosed. The method includes focusing a radiation beam on the surface and introducing a precursor gas near the surface wherein the precursor gas forms the material on the surface upon radiation by the radiation beam. The method further includes introducing an assistant gas near the surface wherein the assistant gas produces nitric oxide radicals upon radiation by the radiation beam. The nitric oxide radicals facilitate the dissociation process of the precursor gas and reduce contaminants in the deposited material. |
| 申请公布号 |
US2016181094(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201414580463 |
申请日期 |
2014.12.23 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yu Chia-Hao;Chu Yuan-Chih |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of depositing a material on a surface, comprising:
focusing a radiation beam on the surface; introducing a precursor gas near the surface wherein the precursor gas forms the material on the surface upon radiation by the radiation beam; and introducing an assistant gas near the surface wherein the assistant gas produces nitric oxide radicals upon radiation by the radiation beam. |
| 地址 |
Hsin-Chu TW |
