| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a positive radiation-sensitive composition having such a resolution as to enable sub-quater micron patterning and having high sensitivity and high dry etching resistance. <P>SOLUTION: The positive radiation-sensitive composition comprises (a1) a polymer containing a structural unit represented by formula (1) (where R<SP>1</SP>is H, a 1-4C alkyl, cyano or halogen; X is arylene; R<SP>2</SP>and R<SP>3</SP>are each alkyl, silylalkyl, substituted alkyl or the like; and R<SP>4</SP>-R<SP>6</SP>are each H, alkyl or aryl) and (b) an acid generator which generates an acid upon irradiation with a radiation or the positive radiation-sensitive composition comprises (a2) a polymer containing a structural unit represented by formula (2) (where R<SP>7</SP>is H, a 1-4C alkyl, cyano or halogen; Y is a single bond or alkylene; R<SP>8</SP>is an aromatic ring; R<SP>9</SP>is alkyl, silylalkyl, substituted alkyl or the like; and R<SP>10</SP>-R<SP>12</SP>are each H, alkyl or aryl) and (b) the acid generator which generates an acid upon irradiation with a radiation. A method for producing a resist pattern using these is provided. <P>COPYRIGHT: (C)2003,JPO |
