发明名称 A METHOD FOR MANUFACTURING A PROBE TIP
摘要 According to an embodiment of the present invention, a probe tip manufacturing method comprises: a step of providing a silicon-on-insulator (SOI) substrate including an upper plate and a lower plate containing silicon and an oxide film plate formed between the upper and lower plates to come in contact with the upper and lower plates; a step of depositing a first protective film on each of a top surface and an underside of the SOI substrate; a step of eliminating the first protective film deposited on the top surface while remaining a column part of a probe tip of the first protective film deposited on the top surface; a step of eliminating the first protective film deposited on the underside of the SOI substrate while remaining a supporting unit part of the first protective film deposited on the underside; a step of etching a part of the lower plate from which the first protective film of the underside is eliminated to the oxide film; a step of depositing a second protective film on a top surface; a step of eliminating the second protective film deposited on the top surface while remaining a cantilever part and a supporting unit part of the second protective film; a step of etching a part of the upper plate where the second protective film is eliminated; a step of eliminating the second protective film from the top surface; a step of forming a silicon column by etching the upper plate at a predetermined depth; a step of eliminating the remaining first protective film on the top surface; a step of depositing a third protective film on a top surface, and a lateral surface of the silicon column; a step of etching a part of the third protective film on a rim of an end of the silicon column; a step of etching the end of the silicon column to be sharp through a gap in the third protective film formed by etching the third protective film; and a step of eliminating the remaining protective films, and separating the probe tip. The purpose of the present invention is to manufacture the probe tip using the silicon plate and the oxide film.
申请公布号 KR20160074073(A) 申请公布日期 2016.06.28
申请号 KR20140182862 申请日期 2014.12.18
申请人 KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION 发明人 KIM, CHANG KYU;LEE, JUN WOO;PARK, SANG JOON
分类号 G01Q60/48 主分类号 G01Q60/48
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