| 摘要 |
FIELD: microelectronics, semiconductor diodes. SUBSTANCE: parallel-laminated diode includes metal electrodes and plate of semiconductor material contacting them. Two laminated electrodes made of metal are placed in parallel and thin semiconductor plate is positioned between them. Concentration of carriers in semiconductor material amounts to 20% or less than concentration of current-conducting electrons in metal. One metal electrode is so fabricated that its surface on side facing plate of semiconductor material has assemblage of recesses directed deep into electrode. Mean diameter of recesses is under 4 mcm. Recesses are hollows or sequence of protrusions in which convex and concave sections alternate. Recesses can cross-sections rounded, square or rectangular form. Such diode ensures static output voltage and current in external electric network without application of bias voltage and bias current which is technical result of invention. EFFECT: ensured static output voltage and current without application of bias voltage and bias current. 18 cl, 11 dwg
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