发明名称 MANUFACTURING METHOD FOR PHOTOMASK AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE USING THE PHOTOMASK
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a photomask enabling accurate success and failure judgment. <P>SOLUTION: In the manufacturing method for the photomask, a mask pattern is prepared on the photomask (ST.1), the dimension of the prepared mask pattern is measured (ST.2, ST.3), an exposure tolerance at the time of exposing the mask pattern to a body to be exposed is obtained on the basis of the result of dimension measurement whether or not the obtained exposure tolerance satisfies a prescribed exposure tolerance is judged and the success and failure of the photomask is judged on the basis of the result of judging whether or not the exposure tolerance is satisfied. The dimension measurement includes the dimension measurement of a critical pattern part where the exposure tolerance becomes small at the time of exposing the mask pattern to the body to be exposed in the mask pattern. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003255509(A) 申请公布日期 2003.09.10
申请号 JP20020054774 申请日期 2002.02.28
申请人 TOSHIBA CORP 发明人 NOJIMA SHIGEKI;IKENAGA OSAMU
分类号 G03F1/32;G03F1/36;G03F1/68;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/32
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