| 摘要 |
An electrostatic capacitance detection device comprising M number of individual power-supply lines and N number of individual output lines arranged in a matrix of M rows and N columns, and an electrostatic capacitance detecting element formed at the intersection thereof, wherein the electrostatic capacitance detecting element includes a signal detection element and a signal amplifying element, the signal detection element includes a capacitance detecting electrode and a capacitance detecting dielectric layer, and the signal amplifying element includes an MIS thin-film semiconductor device for signal amplification, including a gate electrode, a gate insulator, and a semiconductor layer. <IMAGE>
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