| 发明名称 |
Dual III-V nitride laser structure with reduced thermal cross-talk |
| 摘要 |
A dual III-V nitride laser structure has a thick current spreading layer on a sapphire substrate and a trench extending into the current spreading layer to reduce thermal cross-talk between the dual lasers.
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| 申请公布号 |
US6618418(B2) |
申请公布日期 |
2003.09.09 |
| 申请号 |
US20010000898 |
申请日期 |
2001.11.15 |
| 申请人 |
XEROX CORPORATION |
发明人 |
NORTHRUP JOHN E.;KNEISSL MICHAEL A. |
| 分类号 |
H01S5/22;H01S5/343;H01S5/40;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/22 |
| 代理机构 |
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代理人 |
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| 地址 |
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