发明名称 Memory module with test mode
摘要 Embodiments of the present invention provide memory modules that mitigate the problems associated with using address pins on memory modules to supply super voltages to memory devices on the memory modules. In one embodiment, the memory module has a memory device that has a test pin. A pin of the memory module is connected to the test pin. The pin of the memory module connects the test pin to one of ground, a power source, or an open circuit when the memory module is inserted in a socket for operation. The pin of the memory module can be used to selectively supply a test voltage to the test pin when the memory module is not connected for operation.
申请公布号 US6618304(B2) 申请公布日期 2003.09.09
申请号 US20010036772 申请日期 2001.12.21
申请人 MICRON TECHNOLOGY, INC. 发明人 DUESMAN KEVIN
分类号 G11C29/48;(IPC1-7):G11C7/00;G01R31/28 主分类号 G11C29/48
代理机构 代理人
主权项
地址