| 摘要 |
A digital radiography imager (500), comprises: a semiconductor layer (530) disposed above a charge-collection layer (540); and a bias electrode layer (520) disposed above the semiconductor layer, the bias electrode to generate an electric field within the semiconductor layer, wherein the semiconductor layer has a first surface (531) adjacent to the charge-collection layer and a second surface (533) adjacent to the bias electrode, wherein the flat panel imager is configured such that x-rays traverse the charge-collection layer before propagating through the semiconductor layer, wherein the semiconductor layer produces charges (532, 534) directly from the x-rays and the charges are directly detected by the charge-collection layer. |
