| 发明名称 |
Barrier layer for silicon containing substrate |
| 摘要 |
A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a barium-strontium aluminosilicate includes an aluminosilicate of Group IIA and/or Group IIIB and a Group VB oxide.
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| 申请公布号 |
US6617036(B2) |
申请公布日期 |
2003.09.09 |
| 申请号 |
US20010034035 |
申请日期 |
2001.12.19 |
| 申请人 |
UNITED TECHNOLOGIES CORPORATION |
发明人 |
EATON HARRY E.;HOLOWCZAK JOHN E. |
| 分类号 |
C04B41/85;B32B18/00;C04B41/50;C04B41/52;C04B41/87;C04B41/89;C23C4/10;C23C26/00;C23C28/00;C23C28/04;C23C30/00;F01D5/28;(IPC1-7):B32B9/04;F03B13/12 |
主分类号 |
C04B41/85 |
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