| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a laser exposure system which can expose a photosensitive material by a light having an EL light reduced from an output light of a gallium nitride (GaN)-based semiconductor laser. <P>SOLUTION: Light emitted from a laser light source 211B constituted of the GaN-based semiconductor laser is collected by a condenser lens 44 and applied to a surface of a reflecting type diffraction grating 46. The laser light source 211B emits the EL light 49 together with the laser light 48. The laser light 48 oscillated by a predetermined wavelength is diffracted by the reflecting type diffraction grating 46 in a predetermined direction, whereas the EL light 49 as an incoherent light having random emission position, direction and wavelength is hardly diffracted and is reflected as it is. The EL light included in the output light is thus separated and removed. <P>COPYRIGHT: (C)2003,JPO</p> |
