| 摘要 |
A high breakdown voltage semiconductor device includes a semiconductor layer, a drain offset diffusion region, a source diffusion region, a drain diffusion region, a buried diffusion region of a first conductivity type that is buried in the drain offset diffusion region, at least one plate electrode in a floating state formed on a field insulating film, and a metal electrode that is formed on an interlayer insulating film positioned on the plate electrode and a part of which is electrically connected to the drain diffusion region and that is capacitively coupled to the plate electrode.
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