| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for silicon devices in which a manufacturing efficiency can be improved and a sacrifice wafer can be removed surely, and a manufacturing method for inkjet recording heads. <P>SOLUTION: The manufacturing method for the silicon device which has a thin film pattern on a silicon substrate includes a process of joining the sacrifice wafer 110 comprising a silicon monocrystal substrate to one face of a silicon wafer 100, a process of forming the thin film pattern on the silicon wafer, a process of forming a correcting mask 130 comprising a plurality of correcting parts 57 arranged in a predetermined pattern by patterning a silicon dioxide film 56 on a surface of the sacrifice wafer 110, and a process of removing the sacrifice wafer 110 by anisotropic etching via the correcting mask 130. <P>COPYRIGHT: (C)2003,JPO |
