发明名称 PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
摘要 <p>A plasma treatment apparatus and method are provided, which have the capability of maintaining a stable discharge, achieving a sufficient plasma treatment, and reducing plasma temperature. In this apparatus, electrodes are arranged to define a discharge space therebetween, and a dielectric material is disposed at a discharge-space side of at least one of the electrodes. A voltage is applied between the electrodes, while a plasma generation gas being supplied into the discharge space, to develop the discharge in the discharge space under a pressure substantially equal to atmospheric pressure, and provide the plasma generated by the discharge from the discharge space. A waveform of the voltage applied between the electrodes is an alternating voltage waveform without rest period. At least one of rising and falling times of the alternating voltage waveform is 100 mu sec or less. A repetition frequency is in a range of 0.5 to 1000 kHz. An electric-field intensity applied between the electrodes is in a range of 0.5 to 200 kV/cm. <IMAGE></p>
申请公布号 AU2003211351(A1) 申请公布日期 2003.09.09
申请号 AU20030211351 申请日期 2003.02.20
申请人 MATSUSHITA ELECTRIC WORKS, LTD.;HAIDEN LABORATORY INC. 发明人 KOHICHI MATSUNAGA;NORIYUKI TAGUCHI;YASUSHI SAWADA
分类号 H05H1/24;(IPC1-7):H05H1/24;C23C16/509;H01L21/306;H01L21/205 主分类号 H05H1/24
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