| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing method capable of reducing scratches on a surface of a polishing object by effectively removing large abrasive grains grown on surfaces of fixed abrasive grains by dressing and preventing contamination of the polishing object by removing the abrasive grains attached on the surface of the polishing object after polishing. <P>SOLUTION: A liquid or that in which inactive gas and pure water or a chemical are mixed is injected on the surfaces of the fixed abrasive grains 46a during or after dressing to grow free abrasive grains on the surfaces of the fixed abrasive grains 46a under the polishing method to polish a semiconductor wafer while sliding it by pressing it on the fixed abrasive grains 46a. <P>COPYRIGHT: (C)2003,JPO |
