Quasi-damascene gate, self-aligned source/drain methods for fabricating devices

摘要

Methods for use in fabricating integrated circuit structures. One embodiment of the present invention is a quasi-damascene gate, self-aligned source/drain method for forming a device on a substrate that includes steps of: (a) forming a gate dielectric layer over the substrate; (b) forming a first gate electrode layer over the gate dielectric layer; (c) forming a contact etch stop layer over the first gate electrode layer; (d) forming a self-aligning layer over the contact etch stop layer; and (e) forming and patterning a mask over the self-aligning layer.