| 发明名称 |
Ferroelectric semiconductor memory device and a fabrication process thereof |
| 摘要 |
A ferroelectric random access memory has a ferroelectric capacitor formed of a stacking of a lower electrode, a PZT film and an upper electrode of SrRuO3, wherein the PZT film includes pinholes, with a pinhole density of about 17/mum2 or less.
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| 申请公布号 |
US6617626(B2) |
申请公布日期 |
2003.09.09 |
| 申请号 |
US20010797430 |
申请日期 |
2001.02.28 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
OZAWA SOICHIRO;SUN SHAN;NOSHIRO HIDEYUKI;HICKERT GEORGE;MATSUURA KATSUYOSHI;CHU FAN;SAITO TAKEYASU |
| 分类号 |
H01L21/02;H01L21/316;H01L21/8246;H01L27/105;H01L27/115;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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