发明名称 MOS type reference voltage generator having improved startup capabilities
摘要 A reference voltage generator having high-speed starting at a low power source voltage and with high stability and high precision, without substantially increasing the circuit area. NMOS transistors 10 and 12 form a current mirror circuit, with the same drain current I. PMOS transistors 14 and 16 form a current mirror circuit, and drain current I is fed to the current mirror circuit. Resistor 18 provides an offset between the source voltages of PMOS transistors 14 and 16. Start-up capacitor 22 is connected between gate/drain of NMOS transistor 10, which is connected as a diode, and the terminal of power source voltage VDD on the positive electrode side. And/or a start-up capacitor 24 is connected between gate/drain of diode-connected PMOS transistor 16 and the terminal of power source voltage VSS on the negative electrode side. In another embodiment PMOS transistors 25, 26 form a current mirror with the same drain current I. NMOS transistors 21, 23 form a current mirror and the drain current I is fed to the current mirror circuit. Resistor 28 provides an offset to the terminal of power source VSS. Start-up capacitor 32 is connected between the gate/drain of PMOS transistor 25 and Vss.
申请公布号 US6617835(B2) 申请公布日期 2003.09.09
申请号 US20020140378 申请日期 2002.05.06
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 NISHIMURA MASATO
分类号 H01L27/04;G05F3/26;H01L21/822;H03F3/343;(IPC1-7):G05F3/16 主分类号 H01L27/04
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