| 摘要 |
In at least part of the layers of the integrated optical channel waveguide system, such as cladding layers, a passive light guiding layer and an active light guiding layer, an adiabatic layer thickness transition positioned next to a working zone is used to adapt the waveguide structure in the working zones to individually optimized functionality. In this way, the relative layer thickness values as located in the working area, for example a sensor window, a modulation region and a fiber-chip region, can be individually optimized, for example, for maximal evanescent field sensitivity, for minimal modulation voltage and for efficient coupling of light power without the necessity of the optical layer-thickness values elsewhere in the system having to be adjusted. Incorporated in a Mach-Zehnder interferometer this results in an exceptionally sensitive and reliable sensor. Preferably the channel waveguide system is incorporated in an electronic circuitry in which e.g. a phase shift induced by the quantity to be determined is generated.
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