| 摘要 |
There is a method of manufacturing a semiconductor device. In an example embodiment, the method comprises applying a semiconductor substrate that is provided with a conductor at a surface. The conductor has a top surface portion and sidewall portions, of which at least the top surface portion is provided with an etch stop layer comprising silicon carbide. A dielectric layer is applied. A via is etched in the dielectric layer over the conductor and, and stopping on the etch stop layer to create an exposed part of the etch stop layer. Inside the via from at least the top surface portion of the conductor, the exposed part of the etch stop layer is removed. The via is filled with a conductive material. |
