| 摘要 |
A linear image sensor using phototransistors as light receiving elements has improved after-image characteristics and reduced production costs by providing a light-receiving MOS diode proximate each photosensor, placing the MOS diode in an inversion state during the accumulation of photo-charge so that the accumulated photo-charge is accumulated at a base region of the phototransistors, placing the MOS diode in an accumulating state during a reset operation to return the phototransistors to an initial state after a readout operation has been performed, so that residual charge without reading out is transferred to the base region of the phototransistors and an after-image caused by residual charge is reduced through an emitter of the phototransistors.
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