发明名称 |
Photomask and method for manufacturing the same |
摘要 |
A resist mask having a satisfactory resolution effect may be obtained even in the case of use of exposure light having a wavelength of 200 nm or more. An opaque pattern 2a comprising an organic layer for transferring a pattern is constituted by a multi-layer formed by a photo-absorptive organic layer 3a having an light shielding effect or a light attenuating effect even relative to exposure light having a wavelength of 200 nm or more, and a resist layer 4a for chiefly patterning this. |
申请公布号 |
US6617265(B2) |
申请公布日期 |
2003.09.09 |
申请号 |
US20010927318 |
申请日期 |
2001.08.13 |
申请人 |
HITACHI, LTD. |
发明人 |
TANAKA TOSHIHIKO;HASEGAWA NORIO |
分类号 |
G03F1/08;G03F1/10;G03F1/32;G03F1/54;G03F1/56;G03F1/68;G03F1/80;G03F7/20;G03F9/00;H01L21/027;H01L21/31;H01L21/3205;H01L21/4763;(IPC1-7):H01L21/31 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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