发明名称 INTEGRATED INDUCTIVE CIRCUITS
摘要 An integrated inductor may be formed over a substrate. An aperture may be formed by a backside etch through the semiconductor substrate underneath the integrated inductor. The aperture may then be filled with a dielectric material. As a result of the removal of the underlying substrate material, magnetic and capacitive coupling of the inductor to the substrate may be reduced. In addition, in some cases, the presence of the dielectric may facilitate attachment of the resulting die to a leadframe and package without degrading the inductor's performance and may provide better structural support.
申请公布号 AU2003210712(A1) 申请公布日期 2003.09.09
申请号 AU20030210712 申请日期 2003.01.29
申请人 PROGRAMMABLE SILICON SOLUTIONS 发明人 TING-WAH WONG;CHONG WOO;CLEMENT SZETO
分类号 H01L21/02;H01L27/08;(IPC1-7):H01L21/02;H01L21/822;H01F27/34;H01F27/32;H01L27/06;H01L21/762;H01L23/14 主分类号 H01L21/02
代理机构 代理人
主权项
地址