发明名称 |
Non-volatile semiconductor memory device with a memory array preventing generation of a through current path |
摘要 |
A NROM(R) memory array is divided into memory blocks. An isolating portion for electrically isolating corresponding memory blocks from each other is formed in the boundary region between adjacent memory blocks. When read or write operation is performed one bit per memory block, a through current path can be prevented from being generated in the read or write operation.
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申请公布号 |
US6618286(B2) |
申请公布日期 |
2003.09.09 |
申请号 |
US20020146031 |
申请日期 |
2002.05.16 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KATO HIROSHI;OOISHI TSUKASA |
分类号 |
G11C5/02;G11C8/12;G11C16/02;G11C16/04;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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