发明名称 Integrated active moisture and oxygen getter layers
摘要 An integrated circuit structure comprises a main dielectric layer having a top surface. A cavity having sidewalls is formed in the main dielectric layer. A liner is formed on the sidewalls of the cavity. A metal conductor such as copper is formed over the liner filling the lined cavity. A getter layer is formed in the structure which combines with oxygen/moisture to form inert reaction products thereof. The getter layer can be either a conductive material which can be included in the liner or a dielectric layer which can be formed on top of the main dielectric layer, buried in the main dielectric layer or below the main dielectric layer.
申请公布号 AU2003217368(A8) 申请公布日期 2003.09.09
申请号 AU20030217368 申请日期 2003.02.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 STEPHEN M. GATES;VINCENT J. MCGAHAY;JOHN A. FITZSIMMONS
分类号 H01L23/26;H01L23/522;H01L23/532;(IPC1-7):H01L29/41 主分类号 H01L23/26
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