BOOSTING POTENTIAL GENERATING CIRCUIT AND CONTROL METHOD

摘要

PROBLEM TO BE SOLVED: To provide a boosting potential generating circuit in which high speed operation can be performed in a semiconductor memory, while miniaturization also can be performed, even if external power source voltage is dropped in a semiconductor memory.

SOLUTION: In a boosting potential generating circuit provided with a capacitive MOS transistor and a transfer MOS transistor and used for a DRAM comprising memory cells, a boosting potential generating circuit of small area and large capacitance can be realized by making a gate insulation film of the capacitive MOS transistor a thinner film than a gate insulation film of a MOS transistor constituting a memory cell. In this case, it is preferable that thickness of a gate insulation film of the transfer MOS transistor is made the same as or thicker than that of the capacitive MOS transistor.

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