| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method for using resist where resolution performance is regarded to be important and at the same time for easily reducing an opening pattern, and to provide a manufacturing method of a semiconductor device. SOLUTION: A lower layer film 2 that can generate an acid on a film 1 to be treated is formed, and the resist layer is subjected to patterning to form a resist pattern. By etching with the resist pattern as a mask, an opening pattern C1 is formed in the lower layer film 2. The opening pattern C1 is covered, and a film 6 for crosslinking causing a crosslinking reaction due to the presence of the acid is formed. A crosslinking film 7 is formed on the inner wall of the opening pattern C1 of the lower layer film 2 by supplying the acid 5 from the lower layer film 2. The film 6 for crosslinking at a non-crosslinked portion is removed. The film 1 to be treated is etched with the lower layer film 2 and the crosslinking film 7 as the mask. COPYRIGHT: (C)2003,JPO
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