发明名称 SEMICONDUCTOR WAFER, METHOD OF PROCESSING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor wafer, a method of processing the same, and a method of manufacturing a semiconductor device, with which the production yield of the chips formed in the outermost region of the chip-forming region is kept high. SOLUTION: This method of processing a semiconductor wafer includes a step (A) of forming trench element isolation regions. The semiconductor wafer 10 comprises a chip region 20 and a non-chip region 22. In the step (A), dummy trench element isolation regions 40 are formed in at least a part of the non-chip region 22. The method of manufacturing a semiconductor device includes the method of processing a semiconductor wafer. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003249546(A) 申请公布日期 2003.09.05
申请号 JP20030000402 申请日期 2003.01.06
申请人 SEIKO EPSON CORP 发明人 MORI KATSUMI
分类号 H01L21/76;H01L21/02;(IPC1-7):H01L21/76 主分类号 H01L21/76
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