发明名称 |
TRANSPARENT CONDUCTIVE FILM WITH LOW RESISTANCE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a transparent conductive thin film that is sintered at low temperatures and has low electrical resistances after sintering, and to provide the transparent conductive film with low resistances. <P>SOLUTION: A dispersion liquid of fine particles of metal oxides such as ITO or the like is applied on a substrate to be treated and sintered at 150-200°C in the atmosphere to form a porous transparent conductive film, and then heated at 100-250°C in a mixture atmosphere of a gas including oxygen or ozone and an indium halide gas or an organic indium gas. Holes in the porous conductive film are filled with indium oxide generated by the reaction of oxygen and organic indium. <P>COPYRIGHT: (C)2003,JPO |
申请公布号 |
JP2003249125(A) |
申请公布日期 |
2003.09.05 |
申请号 |
JP20020050300 |
申请日期 |
2002.02.26 |
申请人 |
ULVAC JAPAN LTD |
发明人 |
KAWAMURA HIROAKI;TAKEI HIDEO;ISHIBASHI AKIRA |
分类号 |
H01L51/50;C04B35/00;C04B35/495;C04B35/64;H01B5/14;H01B13/00;H05B33/14;H05B33/28 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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