发明名称 METHOD FOR BONDING SEMICONDUCTOR AND STACKED SEMICONDUCTOR FABRICATED BY THIS METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for bonding semiconductors by which a metallic electrodes can be surely bonded with each other, and preferably, the entire portions of prescribed bonding surfaces can be surely bonded with each other at a low temperature without causing a void by preventing the generation of unwanted behavior of a surface coating resin, in bonding semiconductors in particular wafers each other, and to provide a stacked semiconductor fabricated by this method. <P>SOLUTION: In bonding the semiconductors having electrodes exposed from the surfaces thereof with each other, a resin is filled between the electrodes of the surface of one of the semiconductor to form a resin layer, the electrodes of at least one of the semiconductors are allowed to project from the surface, the electrodes of both the semiconductors are made to contact with each other and are pressurized, and after the electrodes are pushed and widened at the contact portion, the surface of the resin layer is made to contact with the surface of the other semiconductor. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003249620(A) 申请公布日期 2003.09.05
申请号 JP20020046087 申请日期 2002.02.22
申请人 TORAY ENG CO LTD;SUGA TADATOMO 发明人 YAMAUCHI AKIRA;SUGA TADATOMO
分类号 H01L21/60;H01L23/52;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L25/065 主分类号 H01L21/60
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