| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of simply and inexpensively manufacturing a nitride semiconductor device having high characteristics and reliability. SOLUTION: The method for manufacturing a compound semiconductor device by using a gas phase sedimentation method includes a process for holding the peripheral part of a compound semiconductor substrate 51 so that main areas of both the main surfaces of the substrate 51 are exposed to a gas material in a gas phase sedimentation reaction room 12, simultaneously supplying the same gas material for the gas phase sedimentation to both the exposed main surfaces of the substrate 51, and thereby allowing the same epitaxial compound semiconductor layer consisting of two layers to simultaneously grow on both the main surfaces of the substrate 51. COPYRIGHT: (C)2003,JPO
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