| 摘要 |
PROBLEM TO BE SOLVED: To suppress short-channel effects and reduce threshold voltage variations in a semiconductor device, having a plurality of kinds of MIS transistors of mutually differing in threshold voltage. SOLUTION: The semiconductor device has a first and second MOS transistor Tr1, Tr2 having a punch-through stopper layer or a pocket layer. The concentration in the punch-through stopper layer or the pocket layer is changed at the Tr1 and Tr2, to make their threshold voltages different. As a result, since the threshold voltage variation can be reduced to hold high threshold voltages, if the gate machining dimensions vary, power consumption reduction for the semiconductor device is realized. COPYRIGHT: (C)2003,JPO
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