| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which suppresses a voltage drop due to the deterioration of a function in a current constricting layer and makes output to be high even at the time of high current driving. SOLUTION: A clad layer (12), an n-type optical waveguide layer (13), an n-type carrier block layer (14), a quantum well active layer (15), a p-type carrier block layer (16), a p-type optical waveguide layer (17), a p-type clad layer (19) and a p-type GaAs contact layer (20) are formed on an n-type GaAs substrate (11). The current constricting layer of forbidden band width larger than the forbidden band width of the optical waveguide layer by 0.2 eV is disposed in the optical waveguide layer. Thus, the leak of a current in the current constricting layer, which is generated in a high current region, is prevented and the voltage drop is suppressed. COPYRIGHT: (C)2003,JPO
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