| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which prevents capacitance electrodes from deforming due to stress and has a high-reliability capacitance element, having stable characteristics. SOLUTION: MOS-type capacitance element 20, having a comparatively large area has a polysilicon layer 23 formed on an N-type lightly-doped region (N-region) 21 via a capacitor insulation film 22 (e.g., oxide film) on a semiconductor substrate 11. The N-region 21 forms one electrode of the capacitance element 20, and the polysilicon layer 23 forms the other electrode thereof. This layer 23 forming the other electrode is the same layer as a polysilicon layer 141 in a MOS transistor 10, hence no silicide layer is selectively formed therefor, via a silicide process is taken to obtain a Ti silicide layer 142. An oxide film 24 is formed as a buffer film on the polysilicon layer 23. COPYRIGHT: (C)2003,JPO
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