| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device in which the end of etching can be judged readily. SOLUTION: The method for fabricating a semiconductor device comprises a step (a) for forming a silicon layer 20 and a silicide layer 30 of high melting point metal sequentially in multilayer on a silicon oxide layer 10, a step (b) for etching the silicide layer 30, and a step (c) for etching the silicon layer 20 following to the step (b). Etching gas being used in the step (b) contains sulfur fluoride. COPYRIGHT: (C)2003,JPO
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