| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device in which the fabrication process can be simplified and the cost can be reduced. <P>SOLUTION: Following to formation of an uppermost trench interconnect layer 13 filled with Cu, a Cu antioxidation layer (SiN) 14, and a passivation film 17 are formed sequentially. The passivation film 17 above a Cu pad electrode part 13a is then opened up to the Cu antioxidation layer 14. Subsequently, the periphery of the opening is coated with a photosensitive polyimide film 19 for relaxing stress at the time of packaging. Following to final cure of the polyimide film, the Cu antioxidation layer 14 is removed by etching while using the polyimide film 19 itself as a mask to expose the Cu pad electrode part 13a and then a metal bump is formed thereat. <P>COPYRIGHT: (C)2003,JPO |
