| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method for obtaining tin-dope indium oxide film which has a relatively high resistance of 200 to 3,000Ω/cm<SP>2</SP>, and has excellent uniformity. SOLUTION: In the method of depositing tin-dope indium oxide, on film deposition, a third component is added in 0.05 to 20 atomic % to In, and the film deposition is performed by a metal fog method. By the same method, an ITO (indium-tin-oxide) film having a high resistance and excellent uniformity can more efficiently be deposited. COPYRIGHT: (C)2003,JPO
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