| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that a breakdown voltage BVdss between a source and a drain is limited since an electric field is easy to concentrate on a B part of the end of an n+ drain layer 39 if the breakdown voltage is further enhanced, though the electric field is hard to concentrate on an A part right under the end of a gate electrode 42 owing to an n- offset drain layer 38, in a conventional transverse power MOS-FET 30. SOLUTION: Since this transverse power MOS-FET comprises an n-deep drain layer, the electric field does not concentrate not only on the A part right under the end of a gate electrode 23 but on the B part of the end of an n+ drain layer 20. Consequently, electric field breakdown caused at the B part of the end of the n+ drain layer 20 in a conventional manner is hard to be caused, and the breakdown voltage BVdss between the source and the drain is enhanced than heretofore. COPYRIGHT: (C)2003,JPO
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