| 摘要 |
PROBLEM TO BE SOLVED: To reduce parasitic capacitance of a bird's beak 4 in a grounded emitter amplifier. SOLUTION: A field oxide film 3 is formed by a PBL method (polysilicon buffered LOCOS method) on an epitaxial layer 2 formed on a semiconductor substrate 1. As a result, sharp bird's beaks 4 are formed the both ends of the field oxide film 3. The parasitic capacitance that generated in reduced owing to the sharp tips of the bird's beaks 4. A base wiring 5 and an interlayer insulating film 6 are coated on each of the field oxide films 3 having the bird's beaks 4. Further, a base region 7 is formed on a region enclosed by the bird's beaks 4, and an emitter region 8 to be embedded in the base region 7 is also formed. COPYRIGHT: (C)2003,JPO
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