| 摘要 |
PROBLEM TO BE SOLVED: To provide an annealed wafer of high quality, which stably suppresses generation and development of slip dislocation at a high-temperature heat treatment, reduces defect density of the surface layer of the wafer, and has a high gettering performance, even in the case of a silicon single-crystal wafer, having a large diameter of 200 mm or larger, in particular, of 300 mm or larger. SOLUTION: A method for manufacturing the annealed wafer by performing high-temperature heat treatment at a temperature range of 1,100-1,350°C for 10-600 minutes under an atmosphere of argon gas, hydrogen gas or a mixed gas thereof, is provided. Since a silicon wafer is used, in which a region 2 for generating OSF is provided, an OSF region 2 is not present, at least at the outermost periphery of a wafer 1 and at a portion located at the end of a support means 10, when it is supported thereby. The silicon wafer is supported by the support means 10 and subjected to pre-annealing, at a temperature which is lower than the heat treatment temperature for the high-temperature treatment, and then subjected to the high-temperature treatment. COPYRIGHT: (C)2003,JPO
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