| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing system having a reaction chamber equipped with an exhaust port capable of exhausting up to high vacuum by contriving the structure of an exhaust gas equalizing plate (exhaust port) of the reaction chamber in an ashing system, or the like, thereby making uniform the exhaust gas flow. SOLUTION: The substrate processing system has a reaction chamber 1 provided at least with a reaction gas inlet 9, a wafer table (substrate table) 2 for holding a substrate, and an exhaust opening 10 for evacuation. An exhaust port 11 having a hole is disposed below the substrate table 2 and that hole is made at a position shifted oppositely to the exhaust opening 10 side from a point corresponding to the center of the substrate table 2. COPYRIGHT: (C)2003,JPO
|
