| 摘要 |
PROBLEM TO BE SOLVED: To prevent an increase of washing time and a deterioration of washing ability in wafer washing using a high temperature chemical. SOLUTION: In a washing process of a semiconductor wafer 111 using the high temperature chemical 116 by a semiconductor wafer washing device, lowering of chemical temperature caused by heat absorption to a washing chamber 101 and its inside (the semiconductor wafer 111, a rotor 112, or the like) generated just after beginning of washing is prevented. Concretely, the temperature of the semiconductor wafer 111 or the like is raised by a heated fluid such as nitrogen air flow heated by using a heating device 150 or the temperature of the washing chamber 101 is raised by a heat source 160 such as an electric heater, and thereby chemical temperature is held stable during the period from washing start to washing finish. COPYRIGHT: (C)2003,JPO
|
