PREPARING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for preparing a semiconductor device having satisfactory characteristics. SOLUTION: In the preparing method for a semiconductor device, a first amorphous semiconductor film where the concentration of oxygen is set to 7×1019cm-3or less is formed on an insulating board, the first amorphous semiconductor film is crystallized by heat treatment, and a second amorphous semiconductor film is formed by a magnetron type RF sputtering method using a single crystal silicon as a target under an atmosphere containing argon. COPYRIGHT: (C)2003,JPO