发明名称 |
PARALLEL TEST SYSTEM FOR SEMICONDUCTOR MEMORY DEVICES |
摘要 |
PROBLEM TO BE SOLVED: To increase the number of parallel tests of semiconductor memory devices even in utilizing limited input/output channels of a test device. SOLUTION: This system is a parallel test system of semiconductor memory devices in which the number of parallel tests can be increased using channels corresponding to the number of channels short-circuited by short-circuiting an information input/output pin corresponding to a semiconductor memory device to be tested, connecting the pin to an input-output channel of a test board through a switch, or short-circuiting a drive pin corresponding to a semiconductor memory device to be tested and connecting it to a drive channel of a test board. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003249095(A) |
申请公布日期 |
2003.09.05 |
申请号 |
JP20020365806 |
申请日期 |
2002.12.17 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KWON HYUK;HO SEIKO;CHIN KENSHO;KIM YONG-WOON;LEE HYOUNG-YOUNG;SHIN YOUNG-GU |
分类号 |
G01R31/28;G11C29/00;G11C29/26;G11C29/56;(IPC1-7):G11C29/00 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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