发明名称 PARALLEL TEST SYSTEM FOR SEMICONDUCTOR MEMORY DEVICES
摘要 PROBLEM TO BE SOLVED: To increase the number of parallel tests of semiconductor memory devices even in utilizing limited input/output channels of a test device. SOLUTION: This system is a parallel test system of semiconductor memory devices in which the number of parallel tests can be increased using channels corresponding to the number of channels short-circuited by short-circuiting an information input/output pin corresponding to a semiconductor memory device to be tested, connecting the pin to an input-output channel of a test board through a switch, or short-circuiting a drive pin corresponding to a semiconductor memory device to be tested and connecting it to a drive channel of a test board. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003249095(A) 申请公布日期 2003.09.05
申请号 JP20020365806 申请日期 2002.12.17
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KWON HYUK;HO SEIKO;CHIN KENSHO;KIM YONG-WOON;LEE HYOUNG-YOUNG;SHIN YOUNG-GU
分类号 G01R31/28;G11C29/00;G11C29/26;G11C29/56;(IPC1-7):G11C29/00 主分类号 G01R31/28
代理机构 代理人
主权项
地址