发明名称 LPCVD APPARATUS, AND THIN FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a CVD thin film deposition apparatus having a step of collecting organic metal compounds from used raw materials with a trap which can recycle more metal compounds without increasing the trap capacity. SOLUTION: In the LPCVD apparatus comprising a vessel body to accommodate metal compounds as raw materials, a heating means which heats the vessel body to vaporize the organic metal compounds into raw gas, a reactor to store a substrate with a thin film deposited thereon, an evacuation pump to keep the reactor at a low pressure atmosphere, and the trap to cool used raw gas from the reactor, the trap has a cylinder having a honeycomb structure in a flow passage through which the used raw materials flow. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003247075(A) 申请公布日期 2003.09.05
申请号 JP20020325206 申请日期 2002.11.08
申请人 TANAKA KIKINZOKU KOGYO KK 发明人 SAITO MASAYUKI
分类号 C23C16/455;C23C16/18;C23C16/44;H01L21/285;(IPC1-7):C23C16/455 主分类号 C23C16/455
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